ROHM Semiconductor / TECHNICAL REFERENCE
SCT3060AL
650-V silicon-carbide trench MOSFET.
FPGA.io Part Number FIO-097A5667A18038C3Internal catalogue reference · manufacturer MPN remains unchanged
Technical reference · Base device — ordering suffix not specified · Checked 2026-09-28
DOCUMENTED FACTS
Technical parameters
Values apply to the device and conditions identified in each source. Family maxima, package limits and full ordering-code specifications must not be treated as interchangeable.
| Parameter | Documented value | Source & conditions |
|---|---|---|
| Technology | Third-generation trench SiC MOSFET | ROHM SCT3060AL ↗Product description; Specifications |
| Drain-source voltage rating | 650 V | ROHM SCT3060AL ↗Product description; Specifications |
| Package | TO-247N | ROHM SCT3060AL ↗Product description; Specifications |
| Maximum junction temperature | 175 °C | ROHM SCT3060AL ↗Product description; Specifications |
Official documents
ROHM SCT3060ALProduct description; SpecificationsWeb ↗Ordering and board constraints
This reference identifies a base device. Package, speed grade, temperature, qualification and packing suffixes have not been inferred.
- Its SiC material and MOSFET device type support both portfolio memberships.
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COMPLETE PART IDENTITIES
Ordering numbers for SCT3060AL
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Exact ordering code requires confirmation
No complete ordering code established from the reviewed public source in this pass. Access restrictions, family-only pages and missing ordering tables remain explicit gaps; no suffix combination was generated.
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