onsemi / TECHNICAL REFERENCE

NTHL020N120SC1

EliteSiC N-channel silicon-carbide MOSFET.

FPGA.io Part Number FIO-D46941B6B1E55EBAInternal catalogue reference · manufacturer MPN remains unchanged

Technical reference · Base device — ordering suffix not specified · Checked 2026-09-28

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NTHL020N120SC1 — technical feature overview — Technical schematicFPGA.io technical schematic for NTHL020N120SC1. Values summarize the documented fields below; consult their source conditions. This is an abstract diagram, not a product photograph, package drawing or pinout. Parameter sources below ↓

DOCUMENTED FACTS

Technical parameters

3 source-linked fields

Values apply to the device and conditions identified in each source. Family maxima, package limits and full ordering-code specifications must not be treated as interchangeable.

Parameter	Documented value	Source & conditions
Drain-source voltage rating	1200 V	onsemi NTHL020N120SC1 datasheet ↗Rev. 3, p. 1 Features and Maximum Ratings
Continuous drain current at TC=25 °C	103 A	onsemi NTHL020N120SC1 datasheet ↗Rev. 3, p. 1 Features and Maximum Ratings
Typical RDS(on)	20 mΩ	onsemi NTHL020N120SC1 datasheet ↗Rev. 3, p. 1 Features and Maximum Ratings

Official documents

onsemi NTHL020N120SC1 datasheetRev. 3, p. 1 Features and Maximum RatingsPDF ↗

Ordering and board constraints

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Series & categories

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COMPLETE PART IDENTITIES

Ordering numbers for NTHL020N120SC1

0 documented codes

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